HS11c-AP 시리즈 전류 센서/트랜스듀서

• 유형: 홀 유형
• 출력 신호의 유형: 아날로그 출력
• 생산 공정: 통합
• 자료: 플라스틱
• 정확도 등급: 0.1G
• 신청: 스위칭 전원 공급 장치
• 모델 번호.: HS11
• 사용자 지정: 사용자 지정
• 운송 패키지: Carton
• 사양: 38.5*22*24.6cm
• 등록상표: TRANSFAR
• 원산지: 중국
• 세관코드: 9030339000
• 생산 능력: 100000 Pieces Per Year

제품 설명

HS11C-AP SERIES CURRENT SENSOR/TRANSDUCER

DESCRIPTION:

For the electronic measurement of currents: DC, AC, pulsed..., with galvanic separation between the primary circuit and the secondary circuit.
 

 

FEATURES:
  Easy to install
  No insertion loss
  Strong anti-interference ability
  Compact size

APPLICATIONS:

  AC frequency converter
  Uninterruptible Power Supplies (UPS)
  Static converters for DC motor drives
  Switched Mode Power Supplies (SMPS)
  Electric Vehicles
  Communication power supplies
 

MODEL LIST:

 

Product MODEL
Model	Rated input current IPN (A)	Measuring range IPM (A)
HS11C-  50A-P	50	±50
HS11C-100A-P	100	±100
HS11C-150A-P	150	±150
HS11C-200A-P	200	±200
HS11C-300A-P	300	±300
HS11C-400A-P	400	±400
HS11C-500A-P	500	±500
HS11C-600A-P	600	±600
HS11C-700A-P	700	±700
HS11C-800A-P	800	±800
HS11C-900A-P	900	±900

HS11C-50A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-50		50
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		40
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows d i /d t	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-100A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-100		100
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		20
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-150A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-150		150
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		13.333
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-200A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-200		200
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		10
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-300A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-300		300
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		6.666
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C- 400A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-400		400
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		5
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-500A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-500		500
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		4
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-600A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-600		600
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		3.333
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-700A-P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-700		700
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		2.857
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-800A - P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-800		800
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		2.5
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

HS11C-900A - P SPECIFICATION

Parameter	Symbol	Unit	Min	Typ	Max	Comment
Electrical  Data
Primary current measurement range	IPN	A	-900		900
Supply voltage	VC	V	4.5	5.0	5.5
Output voltage	VOUT	V	VOUT=1/2Vc±2V			@ VC
Zero output voltage	VQOV	V		1/2Vc		@IP=0A
Theoretical gain	Gth	mV/A		2.222
Current consumption	IC	mA		7	10
Load resistance	RL	kΩ	4.7	-	unlimited	@VOUT to GND
Load capacitance	C2	nF	-	1	10	@VOUT to GND
Power filter capacitor	C1	µF	-	-	-
Performance Data
Gain error	G	%	-1		1	@TA=25
Temperature drift of gain error	TCG	%/ºC	-0.035		0.035	@TA -40ºC~125ºC
Zero point error	VOE	mV		±15		@IP=0A
Temperature drift of zero error	TCVOE	mV/ºC	-0.08		0.08	@TA -40ºC~125ºC
Magnetic offset voltage	VOM	mV	-	5	-
Nonlinear error	L	% of IPN	-1		1	@TA=25,exclude zero VOE
Response time	tr	µs		6	8
Bandwidth ( -3dB)	BW	kHz		50
Current follows di /dt	di/dt	A/µS	50
Phase shift	∅	degree		-
Output noise	Vno pp	mV		-
General Data
Ambient operating temperature	TA	ºC	-40….+125
Ambient storage temperature	TS	ºC	-55….+125
Mass	m	g	approx 22

Note :

1. The output voltage U_out , the offset voltage U_QOV , and the sensitivity G_th are completely proportional to the power supply Vc;

 

1. The frequency of the current to be measured needs to be limited within the frequency band of the sensor, otherwise the core and chip will be overheated;

 

1. Incorrect wiring may damage the sensor ;

Insulation data:                       
 

Parameter	Symbol	Unit	Value	Comment
AC isolation withstand voltage test RMS @ 50Hz, 1 Min	UD	KV	3
Impulse withstand voltage 1.2/50uS	UW	KV	-
Shell material	-	-	UL94-V0	PBT+30%GF
Relative tracking index	CTI	-	-
Creepage distance	dCP	mm	-
electrical clearance	dCI	mm	-

Maximum limit:
 

Parameter	Symbol	Unit	Value
Supply voltage	VC	V	6
Output current (output shorted to ground)	Iout	mA	10
Electrostatic discharge - contact discharge	VESD	V	4000