기본 정보
제품 설명
Features:
Open loop Principle
output voltage Signals
Single Power Supply +5V
Isolation Voltage 3kV
Low Power Consumption
PCB mounting platform
Factory calibrated
Advantages:
High accuracy
Low Insertion Loss
Compact disign
High Creepage distance
High immunity to external interference
Strong insulation isolation
Low temperature coefficient
Appications:
Servo moto drives
Battery supplied application
UPS
SMPS
Power supplies go weiding applicaiton
AC Variable speed drives
MPPT
Specifications and Models |
Primary nominal current IPN (A) | Primary current measuring range IPM (A) | Connection | Type |
10 | ±25 | Through hole | STK-10XP/P |
16 | ±40 | Through hole | STK-16XP/P |
20 | ±50 | Through hole | STK-20XP/P |
32 | ±80 | Through hole | STK-32XP/P |
40 | ±100 | Through hole | STK-40XP/P |
50 | ±125 | Through hole | STK-50XP/P |
Electrical data STK-10XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 10 | | |
Primary current,measuring range | IPM | A | -25 | | 25 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -62.5 | | 62.5 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT-VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -0.94 | | 0.94 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 80 | | 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | X | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-16XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 16 | | |
Primary current,measuring range | IPM | A | -40 | | 40 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -100 | | 100 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -1.5 | | 1.5 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 50 | | 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | X | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-20XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 20 | | |
Primary current,measuring range | IPM | A | -50 | | 50 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -125 | | 125 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -1.88 | | 1.88 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 40 | | 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | X | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | X 85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-32XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 32 | | |
Primary current,measuring range | IPM | A | -80 | | 80 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -200 | | 200 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3 | | 3 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 25 | | 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | X | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-40XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 40 | | |
Primary current,measuring range | IPM | A | -100 | | 100 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
Output voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -250 | | 250 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.075 | | 0.075 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3.75 | | 3.75 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 20 | | 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | X | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
Electrical data STK-50XP/P
Parameter | Symbol | Unit | Min | Type | Max | Comment |
Primary nominal rms current | IPN | A | | 50 | | |
Primary current,measuring range | IPM | A | -125 | | 125 | |
Number of primary turns | NP | - | | 1 | | |
Supply voltage1) | VC | V | 4.5 | 5 | 5.5 | |
Current consumption | IC | mA | | 15 | 20 | |
Reference voltage(output) | VREF | V | 2.48 | 2.5 | 2.52 | Internal reference |
utput voltage range@ IP=IPM | VOUT-VREF | V | -2 | | 2 | |
VREF output resistance | RREF | Ω | 130 | 200 | 300 | series |
VOUT output resistance | ROUT | Ω | | 2 | 5 | series |
Electrical offset voltage @IP=0 | VOE | mV | -5 | | 5 | VOUT-VREF@VREF=2.5V |
Capacitive loading | CL | nF | 0 | | 10 | |
Electrical offset current referred to primary | IOE | mA | -313 | | 313 | |
Temperature coefficient of VREF | TCVREF | ppm/K | -150 | | 150 | -40ºC85ºC |
Temperature coefficient of VOUT- VREF @IP=0 | TCVOE | mV/K | -0.05 | | 0.05 | -40ºC85ºC |
Temperature coefficient of IOE | TCIOE | mA/K | -3.125 | | 3.125 | -40ºC85ºC |
Theoretical sensitivity | GTH | mV/A | | 16 | | 800mV @I=IPN |
Sensitivity error | εG | % of IPN | -0.5 | | 0.5 | Factory adjustment |
Temperature coefficient G | TCG | ppm/K | -200 | | 200 | -40ºC85ºC |
Linearity error 0IPN | εL | % of IPN | -0.5 | | 0.5 | |
Linearity error 0IPM | εL | % of IPM | -0.5 | | 0.5 | |
Response time@ 10% of IPN | tra | us | | | 1 | |
Response time@ 90% of IPN | tr | us | | | 2 | |
Frequency bandwidth( -3 dB) | BW | KHZ | | 400 | | |
Accuracy@I=IPN | X | % of IPN | -1 | | 1 | |
Accuracy@I=IPN ,TA=+85ºC | X85ºC | % of IPN | -2.5 | | 2.5 | See formula note2) |
주소:
Bulding 10, Floor 2, Zhongguan Road No. 1188, Zhenhai District, Ningbo, Zhejiang, China
사업 유형:
제조사/공장
사업 범위:
전기전자
경영시스템 인증:
ISO 9001
회사소개:
Sinomags는 GMR/TMR 웨이퍼, 첨단 자기 센서의 설계, 제조 및 공급 분야에서 세계적인 선도업체이며, 전기 매개변수 측정을 위한 뛰어난 성능의 고품질 솔루션을 제공합니다. 당사의 혁신은 높은 정확도, 빠른 반응, 작고 불그스한 전류 트랜스듀서를 제공하는 데 초점을 맞추고 있습니다.
Sinomags는 유럽 최고의 GMR/TMR 웨이퍼 제조 Fab과 중국 Ningbo의 현재 트랜스듀서 공장을 보유한 자자기 연구 분야 및 자기 기록 산업 분야의 최고 전문가로 구성된 팀이 2012년에 설립했습니다.
미션:
Sinomags
는 첨단 자기 센서 기술과 솔루션을 업계에 제공하기 위해 노력하고 있습니다. 우리는 고객의 문제를 이해하고 해결책을 모색하기 위해 고객과 협력함으로써 번창합니다. 그리고 우리의 목표는 끊임없이 변화하는 혁신을 가져올 수 있는 어려운 문제를 해결하는 것입니다.
혁신:
Sinomags는 주로 기술 혁신으로 주도하며 기술의 힘에 대한 깊은 믿음을 공유합니다. 연구 및 개발은 독립적인 지적 재산권과 40개 이상의 특허 권한을 가진 Sinomags의 성공을 상징합니다.